Memory of multilevel quantum dot structure and method for fabricating the same,申请号GB19990015077-传众专利搜索

首页产品黄页商标征信

会员服务注册登录

法人/股东/高管

发明名称	Memory of multilevel quantum dot structure and method for fabricating the same
摘要
申请公布号	GB9915077(D0)	申请公布日期	1999.08.25
申请号	GB19990015077	申请日期	1999.06.28
申请人	LG SEMICON CO LTD	发明人
分类号	H01L29/06;G11C11/56;H01L27/10;H01L27/112;H01L29/10;H01L29/66;H01L29/788	主分类号	H01L29/06
代理机构		代理人
主权项
地址

您可能感兴趣的专利

Motor control device having protective unit of charging resistor

State quantity detection method in power converting apparatus and power converting apparatus

DC/DC converter, control circuit thereof, power supply, power adapter and electronic apparatus using the same

Methods and apparatuses for obtaining voltage information based on charge packets input at different timings

Boost PFC converter, method and control circuit used for boost PFC converter

Generator set having adjustable terminal box

Charger integrating network interface conversion apparatus

Energy management system and method for controlling high current draws from variable current devices commonly connectable to an electrical circuit

Hybrid power plant for improved efficiency and dynamic performance

Semiconductor driving device and semiconductor device

Mounting bracket for electrical or communication device

Method for controlling wavelength tunable laser

Electric connector assembly with a reliable locking device

Printed quasi-tapered tape helical array antenna

Integrated circuit with electromagnetic communication

Link quality to static and non-static devices

Integrated circuit package

High-frequency signal line

Rechargeable lithium battery and method for manufacturing the same