发明名称 |
Semiconductor device with reduced number of trough holes and method of manufacturing the same |
摘要 |
A semiconductor device with reduced number of through holes is disclosed. A source region and a highly doped contact layer are connected by a conductive layer made of silicide formed on the surface of the source region and the highly doped contact layer commonly, and a drain region and a output electrode are connected by a another conductive layer made of silicide. The conductive layer interconnecting the source region and the highly doped contact layer, and the conductive layer interconnecting the drain region and the output electrode are formed in one step as they are disposed beneath an insulation layer on the surface of the semiconductor substrate <IMAGE> |
申请公布号 |
EP0889527(A3) |
申请公布日期 |
1999.08.25 |
申请号 |
EP19980112422 |
申请日期 |
1998.07.03 |
申请人 |
NEC CORPORATION |
发明人 |
MATSUMOTO, TAKESHI;MARUYAMA, HIROAKI |
分类号 |
H01L21/8238;H01L21/3205;H01L21/768;H01L21/822;H01L23/52;H01L27/04;H01L27/092;H01L29/10 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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