| 摘要 |
In a semiconductor device consisting of a semiconductor body (1) with an integrated lateral resistor (6) resulting from the doping concentration in a resistor region (7) of defined dopant concentration located in a region accessible from the device surface, scattering centres (11) are provided in the region of the lateral resistor (6) for decreasing the temperature dependency of the resistor. Preferably, the scattering centres (11) are defects which are created in the semiconductor crystal by irradiation with non-doping high energy particles, especially alpha particles, protons and/or electrons or oxygen and/or silicon ions, and which are Frenkel and/or Schottky defects, oxygen vacancy complexes and/or double vacancies. Also claimed is a method of producing the device, in which the scattering centres are created by (a) masking (MA) the cathode side of the device to cover the regions outside the resistor region (7); (b) irradiating the cathode side of the device with high energy non -doping particles; and (c) heat treating to stabilise the scattering centres (11). |
