| 摘要 |
A photodetector provides high photo-sensitivity, a low resistance of a cathode circuit and quick photoresponse, and includes a light absorption layer in a cavity, which is formed in a N-Si epitaxial layer and surrounded by a side wall oxide layer. A N-Si diffusion layer is formed on the bottom and the side wall around the cavity and has a lower resistance than the epitaxial layer. The diffusion layer contacts a cathode take-out region so that the resistance of the cathode circuit is decreased.
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