发明名称 |
Hierarchical word line structure |
摘要 |
A hierarchical word line structure for a semiconductor memory is provided that substantially eliminates coupling noise between neighboring wiring lines by driving neighboring sub-word lines by different main word lines. The hierarchical word line structure further reduces a layout size. The hierarchical word line structure uses one less transistor than a related art sub-word line driver. The word line includes a plurality of word line rows that each include a plurality of sub-word line drivers. The sub-word line drivers receive sub-word line driver enable signals among which only one signal becomes high level at a time. Each of the word line rows correspond to a main word line and a subset of the plurality of sub-word line drivers that drive neighboring sub-word lines are coupled to different respective main word lines.
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申请公布号 |
US5943289(A) |
申请公布日期 |
1999.08.24 |
申请号 |
US19980025111 |
申请日期 |
1998.02.17 |
申请人 |
LG SEMICON CO., LTD. |
发明人 |
AHN, JIN-HONG;JEONG, JEONG-SU |
分类号 |
G11C11/407;G11C8/08;G11C8/14;H01L21/8242;H01L27/108;(IPC1-7):G11C8/00 |
主分类号 |
G11C11/407 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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