发明名称 Hierarchical word line structure
摘要 A hierarchical word line structure for a semiconductor memory is provided that substantially eliminates coupling noise between neighboring wiring lines by driving neighboring sub-word lines by different main word lines. The hierarchical word line structure further reduces a layout size. The hierarchical word line structure uses one less transistor than a related art sub-word line driver. The word line includes a plurality of word line rows that each include a plurality of sub-word line drivers. The sub-word line drivers receive sub-word line driver enable signals among which only one signal becomes high level at a time. Each of the word line rows correspond to a main word line and a subset of the plurality of sub-word line drivers that drive neighboring sub-word lines are coupled to different respective main word lines.
申请公布号 US5943289(A) 申请公布日期 1999.08.24
申请号 US19980025111 申请日期 1998.02.17
申请人 LG SEMICON CO., LTD. 发明人 AHN, JIN-HONG;JEONG, JEONG-SU
分类号 G11C11/407;G11C8/08;G11C8/14;H01L21/8242;H01L27/108;(IPC1-7):G11C8/00 主分类号 G11C11/407
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