High-temperature superconducting random access memory

摘要

In the random access memory utilizing an oxide high-temperature superconductor, a first high-temperature superconductor layer 1, a non-superconductor layer 2, a second high-temperature superconductor layer 3 and a non-superconductor layer 4 are formed on an insulated substrate. The first high-temperature superconductor layer 1 is formed in a first loop, forming a memory storage superconductor quantum interference device by two Josephson junctions and a control current line IWX (6) and a bias current line IWY (8) in order to store the flux quantum. The second high-temperature superconductor layer 3 is formed in a second loop, forming a reading superconducting quantum interference device by two Josephson junctions and a control current line IRX (5) and a bias current line IRY (7). By use of the characteristic where the output is occurred according to the polarity of the flux quantum held by the first loop, the writing and reading of the memory is done by a binary logic of "0" and "1", and functions as a random access memory.