| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a quartz glass substrate excellent in dimensional stability. SOLUTION: The quartz glass substrate is for a thin film transistor, produced by patterning a polycrystalline silicon film on the previously heat-treated quartz glass substrate and applying thermal oxidation treatment and satisfies the following (1)-(3) or (4). (1):|(FT0 )-(FTa1 )|<=100 deg.C, (2):|(FTa1 )-(FTa2 )|<=50 deg.C, (3):|(FT0 )-(FTa2 )|<=150 deg.C, (4):|(FT0 )-(FTb2 )|<=50 deg.C. Where, (FT0 ) represents the virtual temp. of a qualts glass ingot, (FTa1 ) represents the virtual temp. of the previously heat-treated substrate, (FTa2 ) and (FTb2 ) are the virtual temp. after thermal oxidation treatment.</p> |
