发明名称 |
PRODUCTION OF SINGLE CRYSTAL AND APPARATUS THEREFOR |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a single crystal, capable of readily obtaining substantially L defect-free cylindrical single crystal and provide an apparatus for practicing the producing method. SOLUTION: In this method for producing a single crystal 4 of a semiconductor material by pulling up the single crystal 4 from a melt 2 charged in a crucible and heated by a side heater which encloses the crucible, the melt 2 encloses the single crystal 4 in a circular region around the single crystal and is further heated by a circular heating apparatus arranged in upper position than the melt 2. |
申请公布号 |
JPH11228285(A) |
申请公布日期 |
1999.08.24 |
申请号 |
JP19980331219 |
申请日期 |
1998.11.20 |
申请人 |
WACKER SILTRONIC G FUER HALBLEITERMATERIALIEN AG |
发明人 |
VON AMMON WILFRIED DR;TOMZIG ERICH DR;VIRBULIS JANIS DR |
分类号 |
C30B15/14;H01L21/208;(IPC1-7):C30B15/14 |
主分类号 |
C30B15/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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