发明名称 PRODUCTION OF SINGLE CRYSTAL AND APPARATUS THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide a method for producing a single crystal, capable of readily obtaining substantially L defect-free cylindrical single crystal and provide an apparatus for practicing the producing method. SOLUTION: In this method for producing a single crystal 4 of a semiconductor material by pulling up the single crystal 4 from a melt 2 charged in a crucible and heated by a side heater which encloses the crucible, the melt 2 encloses the single crystal 4 in a circular region around the single crystal and is further heated by a circular heating apparatus arranged in upper position than the melt 2.
申请公布号 JPH11228285(A) 申请公布日期 1999.08.24
申请号 JP19980331219 申请日期 1998.11.20
申请人 WACKER SILTRONIC G FUER HALBLEITERMATERIALIEN AG 发明人 VON AMMON WILFRIED DR;TOMZIG ERICH DR;VIRBULIS JANIS DR
分类号 C30B15/14;H01L21/208;(IPC1-7):C30B15/14 主分类号 C30B15/14
代理机构 代理人
主权项
地址