发明名称 GROWTH OF SINGLE CRYSTAL AND GROWING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a method for growing a single crystal by which the single crystal having excellent crystallinity, homogeneity in the interior, and accordingly excellent uniformity of optical characteristics is grown in improved yield. SOLUTION: This method for growing single crystal ofβ-type barium borate (β-BaB2 O4 ) comprises indirectly heating a crucible 6, and growingβ-BaB2 O4 single crystal 21 from a barium borate (BaB2 O4 ) molten liquid obtained by using no flux in the crucible by using aβ-BaB2 O4 seed crystal 9.
申请公布号 JPH11228293(A) 申请公布日期 1999.08.24
申请号 JP19980025371 申请日期 1998.02.06
申请人 SONY CORP 发明人 OKAMOTO TSUTOMU;TATSUKI KOICHI;KUBOTA SHIGEO
分类号 G02B6/00;C30B15/00;C30B29/22;G02F1/35;G02F1/355 主分类号 G02B6/00
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