发明名称 |
Capacitive probe for in situ measurement of wafer DC bias voltage |
摘要 |
Apparatus and a concomitant method for estimating voltage on a wafer located in a process chamber. A probe, attached externally to a wall of the process chamber, detects voltage levels generated by a plasma within said process chamber. A relationship between the detected plasma voltage level and the wafer voltage is determined.
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申请公布号 |
US5942889(A) |
申请公布日期 |
1999.08.24 |
申请号 |
US19970878855 |
申请日期 |
1997.06.20 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
LOEWENHARDT, PETER K.;SATO, ARTHUR;TODOROV, VALENTIN |
分类号 |
G01R19/00;G01R31/265;H01J37/32;H01L21/66;(IPC1-7):G01R31/265 |
主分类号 |
G01R19/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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