发明名称 |
Method to fabricate the thin film transistor |
摘要 |
Ultrahigh vacuum chemical vapor deposition (UHV/CVD) and chemical mechanical polishing (CMP) systems are used in a method which can fabricate polycrystalline silicon (poly-Si) and polycrystalline silicon-germanium (poly-Si1-x-Gex) thin film transistors at low temperature and low thermal budget. Poly-Si and poly-Si1-x-Gex can be deposited by UHV/CVD without any anneal step. And due to the ultra low base pressure and ultraclean growth environment, the As-deposited poly films have low defect densities. However, the surface morphology retards the usage of the fabricating top-gate poly TFT's. In this invention, the CMP system is used for improving the surface morphology, high performance poly-Si and poly-Si1-x-Gex TFT's can be obtained. |
申请公布号 |
US5943560(A) |
申请公布日期 |
1999.08.24 |
申请号 |
US19960635016 |
申请日期 |
1996.04.19 |
申请人 |
NATIONAL SCIENCE COUNCIL |
发明人 |
CHANG, CHUN-YEN;LEI, TAN-FU;LIN, HSIAO-YI;CHENG, JUING-YI |
分类号 |
H01L21/205;H01L21/28;H01L21/306;H01L21/336;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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