| 摘要 |
A memory apparatus has, on a substrate, a first semiconductor region of one conduction type, second and third semiconductor regions of a conduction type opposite to the one conduction type in contact with the first semiconductor region, a first electrode provided above, and spaced by an insulating layer from, a region separating the second semiconductor region and the third semiconductor region, and a second electrode provided above, and spaced by an insulating layer from, the first electrode. At a side face of the first electrode, a resistance between the first electrode and the second electrode is arranged to change from a high-resistance state into a low-resistance state, thereby realizing large capacitance, low cost, capability of writing, quick writing and reading, high reliability, low dissipation power, and so on.
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