| 摘要 |
PROBLEM TO BE SOLVED: To facilitate the control or the adjustment of a raw material corresponding to a specification value related to the composition and physical property of a desired glass film and to decrease the number of particles in the formed glass film by using a silicon hydride compound as a glass main component raw material and organic compound based raw material as a glass additive raw material. SOLUTION: Three component mixture of gaseous mixture of Ar-Ge (OC2 H5 )4 gaseous obtained by bubbling Ge (OC2 H5 )4 with gaseous Ar 16 and gaseous SiH4 supplied from bomb 17 and on the other hand, gaseous O2 supplied from a bomb 17 are supplied to a gas introducing structure of a lower part electrode 4 respectively through a gas line 8 and through a gas line 9 and both are mixed at the upper surface or a plasma 19 region side of the electrode 4. The gases are plasma excited to react with each other and the produced additive-containing SiO2 glass is deposited on a substrate 12. The gas line 8 and 9 are individually connected to many gas holes 10, 11 alternately and evenly distributed over the whole upper surface of the disc-like lower part electrode 4. |
