发明名称 |
Annealing methods of doping electrode surfaces using dopant gases |
摘要 |
A method of doping a surface portion of a layer of an integrated circuit device includes the steps of forming a layer of a semiconductor material on an integrated circuit substrate and annealing the layer of the semiconductor material at a predetermined temperature while flowing a dopant gas over the layer of the semiconductor material. More particularly, the step of forming the layer of the semiconductor material can include forming a first sub-layer of the semiconductor material on the integrated circuit substrate and forming a second sublayer of the semiconductor material on the first sublayer where the second sublayer has an increased surface area. For example, the second sublayer can be a hemispherical grained silicon layer.
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申请公布号 |
US5943584(A) |
申请公布日期 |
1999.08.24 |
申请号 |
US19970976338 |
申请日期 |
1997.11.21 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SHIM, SE-JIN;JIN, YOU-CHAN;NAM, SEUNG-HEE |
分类号 |
H01L21/22;H01L21/02;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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