| 摘要 |
A semiconductor processing method for forming a diffusion region is described and which includes providing a semiconductor substrate; forming a first layer of material over the semiconductor substrate; and after forming the first layer, ion implanting a conductivity modifying impurity through the first layer and into the semiconductor substrate to form a diffusion region therein. In an alternative form, a method for forming a field effect transistor is described and which includes providing a substrate; forming a field oxide region and active area region on the substrate; forming a gate dielectric layer atop the substrate and within the active area region; and after forming the gate dielectric layer, ion implanting a dopant impurity through the field oxide region and into the underlying substrate to form a field implant beneath the field oxide region for facilitating electrical isolation of the field effect transistor from adjacent electrical devices. In a third form of the invention, a method for forming a background dopant well relative to a semiconductor substrate is described and which includes providing a semiconductor substrate; forming a field oxide region on the semiconductor substrate; forming a gate dielectric layer atop the semiconductor substrate; forming a conductive gate layer atop the gate dielectric layer; and after forming the conductive gate layer, ion implanting through the field oxide region, gate dielectric layer, and conductive gate layer to form a background dopant well.
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