发明名称 |
Method to cure mobile ion contamination in semiconductor processing |
摘要 |
A first embodiment of the present invention introduces a method to cure mobile ion contamination in a semiconductor device during semiconductor processing by the steps of: forming active field effect transistors in a starting substrate; forming a first insulating layer over the field effect transistor and the field oxide; forming a second insulating layer over the first insulating layer; and performing an annealing step in a nitrogen containing gas ambient prior to exposing the insulating layer to mobile ion impurities. A second embodiment teaches a method to cure mobile ion contamination during semiconductor processing by annealing an insulating layer in a nitrogen containing gas ambient prior to exposing said insulating layer to mobile ion impurities.
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申请公布号 |
US5943602(A) |
申请公布日期 |
1999.08.24 |
申请号 |
US19980071418 |
申请日期 |
1998.05.01 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
THAKUR, RANDHIR P. S. |
分类号 |
H01L21/322;H01L23/31;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/322 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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