| 摘要 |
Disclosed is a thermal air flow sensor in which polycrystalline silicon is used as a heat generating resistor (120), and which has improved detection sensitivity. An upstream heat generating resistor (120A), a downstream heat generating resistor (120B), a temperature measuring resistor (120C), and an air temperature measuring resistor (120D) are formed on a silicon substrate. These resistors are each formed on a silicon substrate. These resistors are each formed of a semiconductor thin film in which polycrystalline silicon is mixed with a silicide compound and which contains an impurity doped therein. The formed resistor has small specific resistance and a large resistance temperature coefficient. <IMAGE> |
