| 摘要 |
PURPOSE: To provide an AlGaInP-based light-emitting device which is long-lived and whose reliability is high. CONSTITUTION: An n-type (Al0.7 Ga0.7 )0.51 In0.49 P clad layer 12 (thickness: about 1μm), an (Al0.15 Ga0.85 )0.51 In0.49 P active layer 13 (thickness: about 0.6μm) and a p-type (Al0.7 Ga0.3 )0.51 In0.49 P clad layer 14 (thickness: about 1μm) as well as a p-type Al0.7 Ga0.3 As layer 15a (thickness: about 3μm) and a p-type GaAs0.5 P0.5 layer 15b (thickness: about 7μm) which constitute a p-type current diffusion layer 15 are laminated and formed sequentially on an n-type GaAs substrate 11. Then, a surface electrode 16 is formed on the p-type GaAs0.5 P0.5 layer 15b, a rear-surface electrode 17 is formed on the rear surface of the n-type GaAs substrte, and a light-emitting device 10 is constituted. |
