发明名称 |
CRYSTAL ION-SLICING OF SINGLE-CRYSTAL FILMS |
摘要 |
A method is provided for detaching a single-crystal film from an epilayer (32)/substrate (37) or bulk crystal structure. The method includes the steps of implanting ions (38) into the crystal structure to form a damage layer (36) within the crystal structure at an implantation depth below a top surface of the crystal structure and chemically etching the damage layer to effect detachment of the single-crystal film from the crystal structure. The method of the present invention is especially useful for detaching single-crystal metal oxide films from metal oxide crystal structures. |
申请公布号 |
CA2320218(A1) |
申请公布日期 |
1999.08.19 |
申请号 |
CA19992320218 |
申请日期 |
1999.02.08 |
申请人 |
THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK |
发明人 |
OSGOOD, RICHARD M., JR.;LEVY, MIGUEL |
分类号 |
C30B33/08;C30B33/00;H01L21/20;H01L21/265;H01L21/306;H01L21/762 |
主分类号 |
C30B33/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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