发明名称 OPTICAL SEMICONDUCTOR DEVICE
摘要 An optical semiconductor using the Franz-Keldysh effect, which exhibits good linearity between the intensity of input light and the intensity of output light under conditions of a high intensity of input light and a high voltage supplied. The optical semiconductor device has a double heterostructure in which is formed an intrinsic semiconductor layer interposed between a first semiconductor layer of n- or p-type and a second semiconductor layer of the opposite conductivity type. The thickness of the intrinsic semiconductor layer decreases toward the direction in which light travels.
申请公布号 WO9941634(A1) 申请公布日期 1999.08.19
申请号 WO1999JP00609 申请日期 1999.02.12
申请人 THE FURUKAWA ELECTRIC CO., LTD.;YOKOUCHI, NORIYUKI;YOSHIDA, JUNJI 发明人 YOKOUCHI, NORIYUKI;YOSHIDA, JUNJI
分类号 G02F1/015;G02F1/025;(IPC1-7):G02F1/015 主分类号 G02F1/015
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