发明名称 |
OPTICAL SEMICONDUCTOR DEVICE |
摘要 |
An optical semiconductor using the Franz-Keldysh effect, which exhibits good linearity between the intensity of input light and the intensity of output light under conditions of a high intensity of input light and a high voltage supplied. The optical semiconductor device has a double heterostructure in which is formed an intrinsic semiconductor layer interposed between a first semiconductor layer of n- or p-type and a second semiconductor layer of the opposite conductivity type. The thickness of the intrinsic semiconductor layer decreases toward the direction in which light travels.
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申请公布号 |
WO9941634(A1) |
申请公布日期 |
1999.08.19 |
申请号 |
WO1999JP00609 |
申请日期 |
1999.02.12 |
申请人 |
THE FURUKAWA ELECTRIC CO., LTD.;YOKOUCHI, NORIYUKI;YOSHIDA, JUNJI |
发明人 |
YOKOUCHI, NORIYUKI;YOSHIDA, JUNJI |
分类号 |
G02F1/015;G02F1/025;(IPC1-7):G02F1/015 |
主分类号 |
G02F1/015 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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