Semiconductor device copper wiring production especially for highly integrated power semiconductor device

摘要

A semiconductor device wiring is formed by melting a thin copper film (30), applied on an insulating layer (20) with a trench (21), in a halogen-containing atmosphere. Preferred Features: The halogen is selected from fluorine, chlorine, bromine and iodine. Fluorine or chlorine is implanted in the gaseous state. Bromine or iodine is supplied in liquid form and is converted to the gaseous state using a bubbler or using liquid MFC and an evaporator.