LED structure is produced with reduced dislocation density and lattice stress

摘要

An LED structure is produced on lattice-matched AlGaInP layers (3-5) on a GaAs substrate (1) by low temperature MOVPE and then high temperature crystallization of a polycrystalline nucleation layer (6), followed by MOVPE of a window layer (7). The LED structure is produced on lattice-matched AlGaInP layers (3-5) on a GaAs substrate (1) by: (a) MOVPE of a thin polycrystalline semiconductor layer (6) of composition AlxGa1-xP on the uppermost AlGaInP layer (5); (b) high temperature recrystallization of the thin polycrystalline semiconductor layer (6); and (c) MOVPE of a semiconductor layer (7) of composition AlyGa1-yP on the crystalline semiconductor layer (6).