发明名称 |
Mehrschichtige Maske für die Strukturierung von keramischen Materialien |
摘要 |
A novel multiple level mask (e.g. tri-level mask 36) process for masking achieves a desired thick mask with substantially vertical walls and thus improves the ion milling process of ceramic materials (e.g. BST). An embodiment of the present invention is a microelectronic structure comprising a ceramic substrate, an ion mill mask layer (e.g. photoresist 42) overlaying the substrate, a dry-etch-selective mask layer (e.g. TiW 40) overlaying the ion mill mask layer, the dry-etch-selective mask layer comprising a different material than the ion mill mask layer, a top photosensitive layer (38) overlaying the dry-etch-selective mask layer, the top photosensitive layer comprising a different material than the dry-etch-selective mask layer, and a predetermined pattern formed in the top photosensitive layer, the dry-etch-selective mask layer and the ion mill mask layer. The predetermined pattern has substantially vertical walls in the ion mill mask layer. <IMAGE> |
申请公布号 |
DE69510714(D1) |
申请公布日期 |
1999.08.19 |
申请号 |
DE1995610714 |
申请日期 |
1995.04.03 |
申请人 |
TEXAS INSTRUMENTS INC. |
发明人 |
BELCHER, JAMES F.;LONG, JOHN P.;FRANK, STEVEN N.;JONES, JEANEE |
分类号 |
G01J1/02;B32B18/00;C04B41/53;C04B41/91;H01L21/027;H01L21/302;H01L21/3065;H01L27/14;H01L27/146;H01L37/02 |
主分类号 |
G01J1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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