| 摘要 |
<p>The invention concerns a magnetoresistor with tunnel effect comprising, in the form of a stack: a first magnetic material layer (12) with free magnetisation; an electric insulant material layer (16), called barrier layer; and a second material magnetic layer (14) with trapped magnetisation. The invention is characterised in that the first magnetic material layer (12) is not more than 7 nm thick. The invention is useful particularly for making magnetic data reading heads.</p> |
