发明名称 CATHODE ARC VAPOR DEPOSITION
摘要 The invention relates to sacraficial cathode electric arc vapor deposition apparatus and processes to provide an improved plasma flow control. A pair of anti-parallel magnetic field generators (6, 7) create a characteristic cusp shaped magnetic field (8) in the vicinity of cathode working surface (2). The magnetic field (8) defines electron-trapping cusp (9). Electric field lines (15) interact with magnetic field (8) to control the plasma flow onto substrate (5). The described configuration directs the plasma at a higher rate per unit of magnetic field strength. Consequently a more stable arc discharge per unit of applied electrical current is possible. In addition, the coatings generated from the present invention result in improved quality and corrosion resistance.
申请公布号 WO9941425(A1) 申请公布日期 1999.08.19
申请号 WO1999US02530 申请日期 1999.02.05
申请人 PHYGEN, INC. 发明人 KHOMINICH, VIKTOR
分类号 C23C14/32;H01J37/32;(IPC1-7):C23C14/34 主分类号 C23C14/32
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