METHOD OF PRODUCING SEMICONDUCTOR DEVICE AND HEAT TREATING APPARATUS

摘要

A method of producing a semiconductor device for annealing stably a wafer without causing any harmful effect, such as thermal stress, in an insulating wafer and a semiconductor thin film formed on the insulating wafer and a heat treating apparatus are disclosed. The method for heat-treating a wafer (1) on which an amorphous silicon film (2) is formed comprises a heating step at which the wafer (1) is preheated by irradiating one side of the wafer (1) with intermediate infrared radiation (100) having a wavelength band of 2.5 to 5 mu m, and a heat-treating step at which the amorphous silicon film (2) is annealed and crystallized at above 800 DEG C and below 1000 DEG C by irradiating the other side with near infrared radiation (200) having a wavelength band of below 2.5 mu m.