| 摘要 |
A semiconductor device has a plurality of transistor units each of which is constituted by a unit prepared by arranging a plurality of unit cells each made up of a drain, gate, and source adjacent to each other on the major surface of a semiconductor substrate, a gate extraction electrode (12b) which extends in a direction perpendicular to the longitudinal direction of the gate and is commonly connected to the gate of the unit cells, a drain extraction electrode (12a) which is positioned at a side where the drain extraction electrode faces the gate extraction electrode (12b) via the unit, extends in a direction perpendicular to the longitudinal direction of the drain, and is commonly connected to the drains of the unit cells, a gate pad (221) connected to the gate extraction electrode (12b) and a drain pad (211) connected to the drain extraction electrodes (12a). The gate pads (221) of adjacent transistor units are connected to each other by a gate extraction electrode connection wiring line (12) having a resistor (27) of 0.6 to 10 OMEGA . The drain pads (211) are connected to each other by a drain extraction electrode connection wiring line (241). A method of manufacturing this semiconductor device is also disclosed. <IMAGE> |
