发明名称 |
Photoconductive thin film, and photovoltaic device making use of the same |
摘要 |
<p>A photoconductive thin film formed on a substrate and having at least hydrogen and crystal grains of silicon, which film has an Urbach energy Eu of 60 meV or below as measured by the constant photocurrent method. This film provides a photoconductive thin film free of light degradation and having superior photoconductivity, and provides a photovoltaic device having superior temperature characteristics and long-term stability.</p> |
申请公布号 |
EP0936681(A2) |
申请公布日期 |
1999.08.18 |
申请号 |
EP19990103051 |
申请日期 |
1999.02.16 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
TOSHIMITSU, KARIYA |
分类号 |
H01L21/205;H01L31/00;H01L31/02;H01L31/0236;H01L31/036;H01L31/0376;H01L31/04;H01L31/075;H01L31/077;H01L31/20;(IPC1-7):H01L31/037;H01L31/023 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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