发明名称 |
Magnetic tunnel junction devices |
摘要 |
<p>Magnetic memory cells include a changeable magnetic region with a magnetic axis along which two directions of magnetization can be imposed, thereby providing two respective states into which the cells are changeable according to electrical and resultant magnetic stimuli applied thereto. Asymmetry in the magnetic stimuli applied to the cell while writing a state therein is disclosed to provide a predictable magnetization pattern evolution from the first direction to the second direction. Physical asymmetry in the layout and/or magnetization of the cell is also disclosed which provides the predictable pattern evolution. These principles can be applied to magnetic random access memory (MRAM) arrays which employ magnetic tunnel junction (MTJ) cells at the intersections of bitlines and wordlines which supply the electrical and resultant magnetic stimuli to write the cells therein. <IMAGE></p> |
申请公布号 |
EP0936623(A2) |
申请公布日期 |
1999.08.18 |
申请号 |
EP19990300847 |
申请日期 |
1999.02.04 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ABRAHAM, DAVID WILLIAM;GALLAGHER, WILLIAM JOSEPH;TROUILLOUD, PHILIP LOUIS |
分类号 |
G11C11/15;G11C11/16;H01L21/8246;H01L27/105;H01L27/22;H01L43/08;(IPC1-7):G11C11/15 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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