Method of reducing metal voids in semiconductor device interconnection

摘要

The occurrence of defects in interconnect metal structure is reduced or eliminated by a method wherein a semiconductor substrate having a dielectric layer, a metal-containing electrically conductive layer and a patterned photoresist layer, the metal-containing electrically conductive layer overlying the dielectric layer and the photoresist layer overlying the conductive layer such that portions of the conductive layer are exposed, is treated using a sequence of at least four reactive ion etching environments each having a different etchant composition from the previous and/or subsequent environment. The invention is especially applicable for metal interconnect structures having aluminum and/or copper as the primary conductive layer.