发明名称 ELECTRON BEAM DEFECT INSPECTION DEVICE AND DEFECT INSPECTION METHOD
摘要 <p>PROBLEM TO BE SOLVED: To inspect/observe a defect of an inspection sample in a short time, and improve throughput of an inspection process by constituting so as to have a detecting mode to detect the defect and an observing mode to observe the defect on the basis of a detecting result in the detecting mode. SOLUTION: A sample 1 such as a wafer being an inspection object is carried to a defect inspection device 10 to be set on a stage 13. First of all, an image of the sample 1 is taken in while scanning the stage 13 by an electron optics system 11 having low power to detect a defect as a detecting mode. Next, the existence, the size and a position of the defect such as an error of a circuit pattern on the sample are outputted in the defect inspecting on processing part 14. When an observing mode is set to inspect the sample in more detail after detecting the defect, the stage 13 is moved by a prescribed distance while still placing the sample, so that a review image is taken in by a reviewing electron optics system 12 having high power to output image data on the defect part from the review image processing part 15.</p>
申请公布号 JPH11223662(A) 申请公布日期 1999.08.17
申请号 JP19980039849 申请日期 1998.02.06
申请人 NIKON CORP 发明人 OOKUBO YUKIHARU
分类号 G01N23/225;G01R31/302;H01J37/28;H01L21/66;(IPC1-7):G01R31/302 主分类号 G01N23/225
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