发明名称 CAPACITIVE LOAD DRIVING CIRCUIT
摘要 PROBLEM TO BE SOLVED: To standardize the constituent element of a circuit and to reduce the chip area of an integrated circuit by constituting a driving circuit of a level shift circuit and a high voltage output circuit. SOLUTION: The level shift circuit 10 and the high voltage output circuit 20 provided at its poststage are connected and MOSFET is applied as a constituting element. When an input signal IN is at a low level, MOSFET.MN2 is turned off and MOSFET.MN1 is turned on. In addition, as the drain electrode comes to a low level, MOSFET.MP2 is turned on. Thus, an output signal OUT is raised to a high potential side power source level. When the input signal IN is at a high level, MOSFET.MN2 is turned on and MOSFET.MN1 is turned off. As the drain electrode of MOSFET.MP2 comes to a low level, MOSFET.MP 1 is turned on and MOSFET.MO1 is turned off. In addition, as MOSFET.MP1 is turned on, MOSFET.MP2 is turned off. Therefore, an output signal OUT is made at a low level. The output signal OUT of the circuit 20 is controlled like this.
申请公布号 JPH11225054(A) 申请公布日期 1999.08.17
申请号 JP19980022956 申请日期 1998.02.04
申请人 HITACHI LTD 发明人 ISOBE TAKESHI;SHIINA KAZUHIRO
分类号 G09G3/20;G09G3/296;H03K17/10;H03K17/687 主分类号 G09G3/20
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