发明名称 Scalable high dielectric constant capacitor
摘要 A capacitor for high density DRAM applications comprises a high- epsilon capacitor dielectric such as BST or PZT in an arrangement which obviates the need for barrier layers during fabrication. The fabrication process allows for electrode placement by simple sputter deposition and further provides for the possibility of capacitor spacing below that of conventional lithographic techniques.
申请公布号 US5940676(A) 申请公布日期 1999.08.17
申请号 US19970971871 申请日期 1997.11.19
申请人 MICRON TECHNOLOGY, INC. 发明人 FAZAN, PIERRE C.;SCHUELE, PAUL
分类号 H01L21/02;H01L21/8242;(IPC1-7):H01L21/00 主分类号 H01L21/02
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