REMAINING MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a new type of memory device having a simple structure that enables long-term residing using MOS technology. SOLUTION: This remaining, electrically programmable and erasable memory device has a MOS transistor containing a gate insulator of a charge transfer type. The gate insulator is provided with a laminate in the cross direction that comprises at least 5 regions, including the middle regions 14 and 15 having the first band gap value, with farthest end regions 11 and 12 having a band gap value larger than a first value, and the central region 13.