Capacitor produced in a semiconductor device

摘要

A capacitor having the pipe structure produced in a semiconductor device, wherein the number of combinations of two pieces of pipe shaped electrodes which face to each other across a pipe shaped dielectric layer is plural, so that the capacitor of this invention is allowed to have a large surface area in which two electrodes face to each other across a dielectric layer, resultantly increasing the amount of electrostatic capacity per unit horizontal area thereof without being accompanied by a decrease in integration and a decrease in the mechanical reliability.