Thin film materials for the preparation of attenuating phase shift masks

摘要

The fabrication of transmissive attenuating types of phase shift masks by formation of and selective etch of a layer, deposited on a substrate. This single layer provides both the phase shift and the attenuation required and is readily patterned and processed to produce attenuating phase shift masks. Materials suitable for the phase shift layer include, but are not limited to, a layer comprising silicon, nitrogen and carbon; and, a layer comprising silicon, oxygen and molybdenum.