发明名称 |
Method for fabricating metal oxide semiconductor field effect transistor |
摘要 |
A method for fabricating a metal oxide semiconductor field effect transistor wherein source/drain junctions are formed by depositing and etching an oxide film having a desired thickness prior to the formation of a pocket region carried out by a pocket ion implantation after forming a gate oxide film and gate electrode on a channel region formed by implanting impurity ions in a silicon substrate. The pocket region is formed by impurity ions in source/drain regions exposed by etching the oxide film. Accordingly, it is possible to reduce the thermal budget applied to the source/drain junctions. As a result, the lateral diffusion of the impurity ions implanted in the source/drain junctions can be suppressed as much as possible. That is, the transistor fabricated in accordance with the present invention has a channel length longer than that obtained in accordance with the prior art. Accordingly, the transistor can have a highly compact or densely integrated size. Since source/drain electrodes are separately formed from each other in accordance with the present invention, the insulation between the source/drain electrodes can be effectively obtained.
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申请公布号 |
US5940710(A) |
申请公布日期 |
1999.08.17 |
申请号 |
US19960610887 |
申请日期 |
1996.03.05 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
CHUNG, IN SOOL;WOO, YOUNG TAG |
分类号 |
H01L21/335;H01L21/336;H01L29/10;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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