| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent the incident limitation of sputter particles in the corner parts of aperture flanks and to form a thin-film resistor which is thick in the film thickness at ends and has excellent electrical characteristics by forming a taper increased in a hole diameter toward a sputter vapor deposition source in the aperture of the metal mask. SOLUTION: A pair of electrodes 64, 64 are formed on a heat resistant and insulative substrate 61 mainly composed of Al2 O3 and a pair of the opposite flanks of the metal masks 62 made of iron, etc., having the square aperture 63 are placed thereon. The metal masks are in close contact with the electrodes so as to be overlapped and one aligned. The sputter particles from the sputter vapor deposition source are supplied to the aperture 63 of the metal mask 62 to deposit the thin-film resistor of Ni-Cr, etc., across the electrodes 64, 64 on the substrate 61. At this time, the other pair of the opposite flanks of the metal mask 62 are provided with the taper 65 increases in the hole diameter toward the sputter vapor deposition source of the aperture 63. The angle of inclination of the taper 65 is preferably set at about 15 to 80 deg., more particularly about 30 to 65 deg. with the surface of the metal mask 62.</p> |
