发明名称 RESIST PATTERN FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a resist pattern forming method by which a resist pattern having excellent sensitivity, resolution, resist peeling property, adhesion property with a substrate, etching durability or plating durability can be formed in a short time with high production yield. SOLUTION: In this method, a layer of the photosensitive resin compsn. described below is formed on a metal substrate surface, exposed, developed and irradiated with active rays. The photosensitive resin compsn. contains a base polymer having 95 to 250 mgKOH/g acid value and 5000 to 200000 weight average mol.wt., an ethylene unsatd. compd. containing >=50 wt.% ethylene oxide-modified trimethylol propane triacrylate, and a self-opening initiator.
申请公布号 JPH11223944(A) 申请公布日期 1999.08.17
申请号 JP19980039763 申请日期 1998.02.04
申请人 NIPPON SYNTHETIC CHEM IND CO LTD:THE 发明人 KOSAKA EIJI;SATO HIROAKI
分类号 G03F7/004;G03F7/027;G03F7/031;G03F7/40;H05K3/06;H05K3/18;(IPC1-7):G03F7/027 主分类号 G03F7/004
代理机构 代理人
主权项
地址