发明名称 SEMICONDUCTOR DEVICE MOUNTING STRUCTURE
摘要 <p>PROBLEM TO BE SOLVED: To enhance a semiconductor device in resistance to a thermal shock and connection reliability between electrodes by a method wherein the electrodes of the semiconductor device and a circuit board are bonded together with solder and an anisotropic conductive film when the semiconductor device is mounted on the circuit board. SOLUTION: When a semiconductor device 1 and a circuit board 3 are bonded together by thermocompression at a prescribed temperature, the electrode 2 of the semiconductor device and the electrode pad 4 of the circuit board 3 are connected together with the molten solder of a solder layer 5, and conductive particles 7 contained arm anisotropic conductive film 6 are made to bite into both the electrode members of the electrode 2 and the solder layer 5 by pressure. The anisotropic conductive film 6 is cured at a prescribed temperature, and the semiconductor device 1 and the circuit board 3 are electrically connected together and fixed. Therefore, the electrode 2 of the semiconductor device 1 and the electrode pad 4 of the circuit board 3 are electrically joined together with solder of the solder layer 5 and the anisotropic conductive film 6, so that the semiconductor device 1 and the circuit board 3 can be improved in connection reliability.</p>
申请公布号 JPH11224886(A) 申请公布日期 1999.08.17
申请号 JP19980024949 申请日期 1998.02.05
申请人 NIPPON SEIKI KK 发明人 YAGISAWA HITOSHI
分类号 H01L21/60;H05K3/32;H05K3/34;(IPC1-7):H01L21/60 主分类号 H01L21/60
代理机构 代理人
主权项
地址