发明名称 |
Heteroepitaxial growth of III-V materials |
摘要 |
The specification describes a process for growing device quality III-V heteroepitaxial layers without the use of buffer layers, i.e. largely defect free layers with thicknesses greater than 50 Angstroms directly on the III-V substrate. These high quality heteroepitaxial layers are grown by low temperature MBE.
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申请公布号 |
US5940723(A) |
申请公布日期 |
1999.08.17 |
申请号 |
US19980017376 |
申请日期 |
1998.02.03 |
申请人 |
LUCENT TECHNOLOGIES INC. |
发明人 |
CUNNINGHAM, JOHN EDWARD;GOOSSEN, KEITH WAYNE |
分类号 |
C30B23/02;H01L21/20;H01L21/205;(IPC1-7):H01L21/20 |
主分类号 |
C30B23/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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