High selectivity oxide to nitride slurry

摘要

An improved slurry for polish removal. One application of this slurry is for shallow trench isolation processing in semiconductor manufacturing. The improved slurry has an enhanced oxide to nitride polish removal selectivity. A modified slurry is formed by mixing a polishing slurry with tetramethyl ammonium hydroxide and hydrogen peroxide. In an alternative embodiment, the modified slurry is formed by mixing a salt of tetramethyl ammonium with a base and with hydrogen peroxide to form the modified slurry. The improved slurry when used during the chemical mechanical polishing (CMP) step of an integrated shallow trench isolation manufacturing process allows the reverse pattern, etch and clean steps to be eliminated prior to CMP.