发明名称 |
Synchronous semiconductor memory device including internal clock signal generation circuit that generates an internal clock signal synchronizing in phase with external clock signal at high precision |
摘要 |
In an internal clock signal generation circuit, a phase comparator for detecting phase difference between an external clock signal and an internal clock signal includes a transistor and a capacitor with respect to a signal line through which a clock signal corresponding to the external clock signal is transmitted, and a transistor and a capacitor with respect to a signal line through which a clock signal corresponding to the internal clock signal is transmitted. The rising timing of the signal having a more lagging phase of the signals of the two signal lines becomes more gentle. As a result, the phase difference is increased, and the phase comparator can compare the phase at high precision.
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申请公布号 |
US5940344(A) |
申请公布日期 |
1999.08.17 |
申请号 |
US19980053058 |
申请日期 |
1998.04.01 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA;MITSUBISHI ELECTRIC ENGINEERING COMPANY LIMITED |
发明人 |
MURAI, YASUMITSU;SAKAMOTO, WATARU;IWAMOTO, HISASHI |
分类号 |
G11C11/407;G11C7/22;(IPC1-7):G11C8/00 |
主分类号 |
G11C11/407 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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