| 摘要 |
A method for forming DRAM capacitor that utilizes the formation of an oxide layer and the subsequent etch-removal of a portion of the oxide layer located in the gap between a first masking layer and a second masking layer in order to form the minimum separation required between the lower electrodes of adjacent capacitors. Furthermore, when the etching operation is carried on into the conductive layer that lies below the oxide layer, the lower electrode of the capacitor is also patterned out. The manufacturing process in this invention does not use the conventional photolithographic technique, and therefore will not be limited by the resolution of the light source. Consequently, distance between two neighboring capacitors can be reduced, and a higher capacitance for the capacitors can be obtained.
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