发明名称 |
ACCURATE IN-SITU LATTICE MATCHING BY REFLECTION HIGH ENERGY ELECTRON DYNAMICS |
摘要 |
An in-situ method is disclosed for highly accurate lattice matching using reflection high energy electron diffraction dynamics. The method includes the steps of providing a substrate of a first semiconductor material and initiating growth of a second semiconductor material thereon. The oscillation amplitude of intensity I of waveform cycles is monitored using reflection high energy electron diffraction. A maximum intensity I+ and a minimum intensity I- is determined over a predetermined number of waveform cycles. The intensity drop .DELTA.I from initial reflectivity to minimum reflectivity of the waveform cycles is determined and a normalized figure of merit FM is calculated for the predetermined number of waveform cycles using the relationship: The fluxes of the second semiconductor material are then adjusted to maximize FM and optimize lattice matching. A multiple quantum well light modulator is also provided including a semiconductor substrate of InP, a multiple quantum well region, disposed above the InP substrate, composed of InGaAs and having a thickness of about 4 .mu.m. The modulator is characterized by a lattice mismatch of less than 2 x 10-4.
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申请公布号 |
CA2149066(C) |
申请公布日期 |
1999.08.17 |
申请号 |
CA19952149066 |
申请日期 |
1995.05.10 |
申请人 |
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发明人 |
CUNNINGHAM, JOHN EDWARD;GOOSSEN, KEITH WAYNE;PATHAK, RAJIV NATH |
分类号 |
G02F1/015;G02B6/12;G02F1/017;H01L21/20;H01L21/203;H01S3/10;(IPC1-7):H01L31/18;H01L31/035;H01L21/26 |
主分类号 |
G02F1/015 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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