发明名称 |
Bipolar power transistor with high collector breakdown voltage and related manufacturing process |
摘要 |
There is described a bipolar power transistor with high breakdown voltage, obtained in a heavily doped semiconductor substrate of the N type, over which a lightly doped N type layer, constituting a collector region of the transistor, is superimposed. The transistor has a base region comprising a heavily doped P type diffusion, which extends into the lightly doped N type layer from a top surface. The transistor further includes an emitter region constituted by a heavily doped N type diffusion extending from the top surface within said heavily doped P type diffusion. The heavily doped P type diffusion is obtained within a deep lightly doped P type diffusion, extending from said top surface into the lightly doped N type layer and formed with acceptor impurities of aluminum atoms.
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申请公布号 |
US5939769(A) |
申请公布日期 |
1999.08.17 |
申请号 |
US19970904257 |
申请日期 |
1997.07.31 |
申请人 |
CONSORZIO PER LA RICERCA SULLA MICROELETTRONICA NEL MEZZOGIORNO |
发明人 |
FRISINA, FERRUCCIO;COFFA, SALVATORE |
分类号 |
H01L21/331;H01L29/06;H01L29/167;H01L29/73;H01L29/732;(IPC1-7):H01L27/082;H01L27/102;H01L29/70;H01L31/11 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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