| 摘要 |
A method is provided for forming a bottom capacitor electrode. While requiring only one mask step, the process forms a container-within-container structure having a high surface area. Specifically, the method comprises providing a structural layer over an insulating layer, and a protective layer over the structural layer. An initial via is formed within the structural layer, and this initial structure is lined with a conductive material, thus forming the outer container of the final structure. A spacer is then formed around the container sidewalls and the via extended through the underlying insulating layer to expose a circuit node. Another conductive layer is then deposited forming the inner container in electrical contact with the circuit node and the conductive outer container, but separated from the outer container sidewalls by the spacer. The via may then be filled and polished, and the spacer, structural layer, and filler selectively removed.
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