发明名称 RESIST PATTERN FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a resist pattern forming method superior in adhesion with a substrate and in resistance to foaming and etching and capable of forming a resist pattern in a short time and in a high yield. SOLUTION: A photosensitive resin composition contains (a) a polymer having carboxy groups, (b) an ethylenically unsaturated compound containing a compound represented by the formula in an amount of 50-100 weight % of the total (b) component, (c) a lophine dimer in an amount of 0.5-6.0 weight % of (a)+(b), (d) a photopolymerization initiator in an amount of 0.1-10 weight % of (a)+(b), and (e) a leuco dye in an amount of 0.1-3.0 of (a)+(b). The resist pattern is formed by coating a metal surface with this resin composition to form a photosensitive layer and exposing and developing it and irradiating it with activated rays after the development. In the formula, each of R1 and R2 is, independently, an H atom or a 1-3C alkyl group, and (n) is an integer of 4-20.
申请公布号 JPH11223943(A) 申请公布日期 1999.08.17
申请号 JP19980039762 申请日期 1998.02.04
申请人 NIPPON SYNTHETIC CHEM IND CO LTD:THE 发明人 KOSAKA EIJI;SATO HIROAKI
分类号 G03F7/004;G03F7/027;G03F7/031;H05K3/06;(IPC1-7):G03F7/027 主分类号 G03F7/004
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