| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain the projection type display, that includes a pixel matrix, at a low cost by employing the structure, in which first polarity impurities and second polarity impurities having higher concentration than that of the first polarity impurities are contained in the source/drain region of the TFT having the second polarity. SOLUTION: A silicon thin film is deposited on a transparent insulating substrate 110, then a desired pattern is formed and a P type TFT channel region 111 and N type TFT channel regions 112 and 113 are formed. Then, acceptor impurities 120 such as boron are implanted over the entire surface by an ion implantation method. Implanted acceptor impurities 120 are activated by a heat treatment to make them acceptors in order to form a P type semiconductor. Then, the P type TFT is coated by a masking material 128 and doner impurities 127 such as phosphorus or arsenic are implanted with the concentration higher than the concentration of the impurities 120. Then, the material 128 is removed, an intralayer insulating film 129 is deposited, a pixel electrode 131 is formed by a transparent conductive film and wirings 130 are formed by metals or the like.</p> |
