SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING MINIATURE MULTILEVEL WIRING STRUCTURE LOW IN PARASITIC CAPACITANCE AND PROCESS OF FABRICATION THEREOF

摘要

After a pattern transfer of a first pattern image to a lower photo-sensitive layer of first material, a second pattern image is transferred to an upper photo-sensitive layer of second material higher in photo-sensitivity than the first material, and the first image and the second image are concurrently developed so as to form a composite etching mask through a simple process.